XMax to Buy Hexa Creation, Gaining High-Voltage GaN Chip Tech
XMax is acquiring Hexa Creation to enter the 1200V vertical GaN power semiconductor space targeting AI data center infrastructure.
XMax announced plans to acquire Hexa Creation, the developer behind 1200V vertical gallium nitride (GaN) power semiconductor technology, in a move designed to position the company at the forefront of next-generation power infrastructure for AI data centers. The deal marks XMax's first direct entry into high-voltage GaN, a rapidly growing segment of the power chip market.
Hexa Creation's core technology centers on vertical GaN architecture capable of operating at 1,200 volts — a specification that makes it particularly suited for the demanding power conversion requirements of large-scale AI computing facilities. Traditional silicon-based power components face increasing limitations as data centers scale up to support energy-intensive AI workloads, giving GaN-based alternatives a competitive opening.
Read more How Much Apple Stock Does New CEO John Ternus Own? →
The acquisition reflects a broader industry trend of semiconductor companies racing to secure proprietary high-voltage GaN capabilities as hyperscalers and cloud providers aggressively expand their AI infrastructure. By absorbing Hexa Creation's intellectual property and engineering talent, XMax aims to accelerate its commercial presence in a market where power efficiency and density are critical differentiators.
Analysts tracking the GaN power sector have noted that 1200V vertical GaN remains a technically challenging frontier, with few developers having achieved production-ready designs. Hexa Creation's expertise in this area would give XMax a meaningful head start against rivals still developing comparable solutions for data center power supply units and other high-demand applications.
Financial terms of the transaction were not disclosed in the announcement. Continue reading at GlobalNewswire.
